A novel self-converging write scheme for 2-bits/cell phase change memory for Storage Class Memory (SCM) application

Author

Chien, W.C. ; Ho, Y.H. ; Cheng, H.Y. ; BrightSky, M. ; Chen, C.J. ; Yeh, C.W. ; Chen, T.S. ; Kim, W. ; Kim, S. ; Wu, J.Y. ; Ray, A. ; Bruce, R. ; Zhu, Y. ; Ho, H.Y. ; Lung, H.L. ; Lam, C.

Author_Institution

Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2015

fDate

16-18 June 2015

Abstract

A new phase change material that provides fast SET speed, high cycling endurance, and large resistance window suitable for MLC SCM is investigated. Thorough understanding of the factors that affect the resistance distribution taught us to avoid operating near the melting temperature of the phase change material. By exploiting the self-converging property of low current SET operation we have designed a novel write scheme that provides fast and accurate MLC programming. High performance and high reliability 2-bits/cell MLC is demonstrated on a 512Mb test chip.

Keywords

phase change materials; phase change memories; MLC programming; phase change material; phase change memory; resistance distribution; self-converging write scheme; storage class memory application; Current distribution; Phase change materials; Phase change memory; Reliability; Resistance; Shape; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI Technology), 2015 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2015.7223709

Filename

7223709