Title :
New trends for mm-wave FET structures
Author :
Abdipour, A. ; Moradi, G.
Author_Institution :
Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
This paper discusses some new viewpoints of signal and noise performances of mm-wave FETs. The effect of reactive (capacitive and inductive) electrode loading and the influence of the slicing procedure in sliced modeling of mm-wave FETs have been studied. The proposed model takes into account not only the active coupling elements but also the capacitive and inductive coupling elements of the device. The results show that a proper sliced model with a suitable electrode loading may improve the device signal and noise performances
Keywords :
millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; active coupling elements; capacitive coupling elements; inductive coupling elements; mm-wave FET structures; noise performance; reactive electrode loading; signal performance; sliced modeling; slicing procedure; Airports; Circuit noise; Couplings; Educational institutions; Electrodes; FETs; Frequency; Signal analysis; Skin effect; Transmission line theory;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.833690
