Title :
Self-limited RRAM with ON/OFF resistance ratio amplification
Author :
Sung Hyun Jo ; Kumar, Tanmay ; Zitlaw, Cliff ; Nazarian, Hagop
Author_Institution :
Crossbar Inc., Santa Clara, CA, USA
Abstract :
We demonstrate sub-5nm filament based electrochemical metallization RRAM with self-limited program in a reliable and controllable manner. This RRAM removes the necessity for any external current compliance in a 1TnR (1S1R) architecture. Furthermore, we report a novel technique to amplify RRAM´s intrinsic ON/OFF resistance ratio by a factor of >104, which offers significant cell-, circuit- and system-level benefits such as reduced power, reduced BER and increased read bandwidth in high density RRAM.
Keywords :
error statistics; integrated circuit metallisation; integrated circuit testing; low-power electronics; resistive RAM; BER; ON-OFF resistance ratio amplification; bit error rate; filament based electrochemical metallization; high density RRAM; self-limited RRAM; self-limited program; Bandwidth; Metallization; Reliability; Resistance; Sensors; Switches; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
DOI :
10.1109/VLSIT.2015.7223715
