CMOS based arrays of nanogap devices for molecular electronics

In this paper we present a novel nanogap device architecture for molecular electronics which is fully CMOS compatible and non-invasive to the contacted self-assembled monolayer. The device exhibits precise control over the electrode spacing. Single cells as well as arrays with electrode distances of 2.5 nm have been realized and characterized in terms of basic functionality and yield. Simulations have revealed scalability for feature sizes down to the ten nanometer regime.