High Q-factor monolithic inductor for RF devices using double ground shield

Author

Fonseca, P.N.L. ; Kretly, L.C.

Author_Institution

Dept. of Microwave & Opt. - DMO, Univ. of Campinas - UNICAMP, Campinas

fYear

2008

fDate

28-30 April 2008

Firstpage

1

Lastpage

4

Abstract

This paper presents a technique to improve RF integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This method was compared with conventional inductors, patterned ground shield, double ground shielding using polysilicon inductors, and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35 mum BiCMOS technology. This technique can be applied to any BiCMOS technology without any additional process.

Keywords

BiCMOS integrated circuits; MMIC; Q-factor; UHF devices; inductors; BiCMOS technology; RF integrated inductor performance; double ground shield; electric field penetration; frequency 3.5 GHz; frequency 4 GHz; frequency 5 GHz; high Q-factor monolithic inductor; polysilicon inductors; size 0.35 mum; Analytical models; BiCMOS integrated circuits; Eddy currents; Inductors; Magnetic separation; Q factor; Radio frequency; Shape; Silicon; Solids; BiCMOS; Q-factor; double ground shield; inductor; n+buried layer; polysilicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference on

Conference_Location

Cancun

Print_ISBN

978-1-4244-1956-2

Electronic_ISBN

978-1-4244-1957-9

Type

conf

DOI

10.1109/ICCDCS.2008.4542670

Filename

4542670