Catalyst-free synthesis routine to indium nitride nanowires

Author

Cheng, Guosheng ; Cimpoiasu, Elena ; Stern, Eric ; Munden, Ryan ; Pradhan, Nilay ; Sanders, Aric ; Reed, Mark A.

Author_Institution

Dept. of Electr. Eng. & Appl. Phys., Yale Univ., New Haven, CT, USA

fYear

2005

fDate

11-15 July 2005

Firstpage

447

Abstract

A vapor-solid growth strategy (catalyst free) of one-dimensional materials was employed to synthesize hexagonal wurtzite InN nanowires with large yield as much as gram quantities on a hot-wall CVD system. Morphology characterization by FE-SEM revealed uniform nanowires with 700°C growth temperature have ∼70 nm average diameter and ∼5-30 micron length. EDS, XRD and micro-Raman spectroscopy characterization showed the formation of high-purity hexagonal wurtzite InN nanowires. Further structural characterizations by high-resolution TEM and low-temperature electrical characterizations (mobility and carrier density) are being undertaken.

Keywords

III-V semiconductors; Raman spectra; carrier density; chemical vapour deposition; crystal morphology; indium compounds; nanowires; scanning electron microscopy; semiconductor growth; transmission electron microscopy; vapour phase epitaxial growth; 700 degC; EDS; FE-SEM; InN; XRD; average diameter; carrier density; catalyst-free synthesis routine; gram quantities; growth temperature; hexagonal wurtzite nanowires; high-resolution TEM; hot-wall CVD system; indium nitride nanowires; low-temperature electrical characterizations; microRaman spectroscopy; micron length; mobility; morphology characterization; one-dimensional materials; structural characterizations; uniform nanowires; vapor-solid growth strategy; Argon; Charge carrier density; Fabrication; Indium; Nanowires; Optical materials; Physics; Spectroscopy; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500795

Filename

1500795