High frequency force sensing with piezoresistive cantilevers

Author

Doll, J.C. ; Petzold, B.C. ; Ghale, P. ; Goodman, M.B. ; Pruitt, B.L.

Author_Institution

Depts. of Mech. Eng., Stanford Univ., Stanford, CA, USA

fYear

2009

fDate

21-25 June 2009

Firstpage

1928

Lastpage

1931

Abstract

We present the design, fabrication and characterization of sub-micron piezoresistive silicon cantilevers for high frequency force detection. The cantilevers are fabricated by a simple three-mask process and doped using POCl₃ diffusion, which enables high doping levels and negligible lattice damage. Devices have a force resolution of 298 pN from 1 Hz - 50 kHz (f₀ = 187 kHz) and 678 pN up to 100 kHz (f₀ = 419 kHz), the highest combination of force resolution and measurement bandwidth to date.

Keywords

cantilevers; force sensors; masks; micromechanical devices; piezoresistive devices; semiconductor doping; POCl₃; doping; force detection; force resolution; high frequency force sensing; piezoresistive cantilever; submicron piezoresistive silicon cantilever; three-mask process; Atomic force microscopy; Biomedical optical imaging; Doping; Fabrication; Force measurement; Force sensors; Frequency; Optical sensors; Piezoresistance; Piezoresistive devices; cantilever; force sensor; piezoresistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285696

Filename

5285696