A UHF SiGe push-pull quartz MEMS oscillator

Author

Moyer, H.P. ; Yoon, Yong Soo ; Xu, Z.A. ; Nagele, R.G. ; Kirby, D.J. ; Kubena, R.L. ; Joyce, R.J. ; Bowen, R.L. ; Chang, D.T.

Author_Institution

HRL Labs., LLC, Malibu, CA, USA

fYear

2014

fDate

19-22 May 2014

Firstpage

1

Lastpage

4

Abstract

Compact oscillators at UHF frequencies and below are challenging for IC designers because of the large size of the passive components, particularly the inductors. An integrated SiGe push-pull sustaining circuit fabricated in the IBM 7WL process eliminates the need for inductors. Combining this circuit with and an external quartz resonator allowed the development of 708 MHz and 744 MHz fundamental mode oscillators. The lowest phase noise achieved was -103 dBc/Hz at a 1 kHz offset for the 708 MHz oscillator. Oscillator total power consumption is <;20 mW.

Keywords

Ge-Si alloys; UHF oscillators; UHF resonators; crystal oscillators; micromechanical resonators; phase noise; semiconductor materials; silicon compounds; IBM 7WL process; UHF push-pull quartz MEMS oscillator fabrication; compact oscillator; frequency 1 kHz; frequency 708 MHz; fundamental mode oscillator; passive components; phase noise; quartz resonator; Inductors; Integrated circuits; Phase noise; Resonant frequency; Silicon germanium; Transistors; MEMS; Quartz; SiGe; oscillators; phase noise; push-pull; resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2014 IEEE International

Conference_Location

Taipei

Type

conf

DOI

10.1109/FCS.2014.6859912

Filename

6859912