• DocumentCode
    1858907
  • Title

    Discovery of fundamental Graphene/Semiconductor Schottky diode equation

  • Author

    Shi-Jun Liang ; Lay Kee Ang

  • Author_Institution
    Eng. Product Dev., Singapore Univ. of Technol. & Design, Singapore, Singapore
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We discover the new scaling of thermionic emission of graphene and then establish a fundamental Schottky diode equation for Graphene/Semiconductor (Gr/S) contact. We also discuss the contact resistance of Gr/S junction. The new physics law discovered in this work has been confirmed by experiments.
  • Keywords
    Schottky diodes; contact resistance; graphene; thermionic emission; contact resistance; graphene a; graphene/semiconductor contact; semiconductor Schottky diode equation; thermionic emission; Contact resistance; Graphene; Junctions; Mathematical model; Physics; Schottky diodes; Thermionic emission; graphene/semiconductor Schottky diode; thermionic emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference (IVEC), 2015 IEEE International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7109-1
  • Type

    conf

  • DOI
    10.1109/IVEC.2015.7223737
  • Filename
    7223737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1858907