DocumentCode
1858950
Title
A flip-chip MMIC design with CPW technology in the W-band
Author
Hirose, T. ; Makiyama, K. ; Shimura, T.M. ; Aoki, S. ; Ohashi, Y. ; Yokokawa, S. ; Watanabe, Y.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
2
fYear
1998
fDate
7-12 June 1998
Firstpage
525
Abstract
We designed and fabricated a W-band flip-chip MMIC amplifier with a coplanar waveguide (CPW) transmission line using 0.15 /spl mu/m InGaP-InGaAs HEMT technology. In addition, we present a test structure for obtaining an accurate flip-chip CPW line model, and demonstrate a two-stage flip-chip MMIC amplifier with a gain of 12 dB at 79 GHz to validate this model.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; field effect MIMIC; flip-chip devices; gallium arsenide; gallium compounds; indium compounds; microassembling; 0.15 micron; 12 dB; 79 GHz; CPW technology; CPW transmission line; EHF; HEMT technology; InGaP-InGaAs; MM-wave IC; W-band MIMIC amplifier; coplanar waveguide; flip-chip CPW line model; flip-chip MMIC design; Bonding; Coplanar transmission lines; Coplanar waveguides; Costs; Electromagnetic fields; Gold; HEMTs; MMICs; Millimeter wave technology; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705047
Filename
705047
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