Title :
Selective removal of micro-corrugation by anisotropic wet etching
Author :
Inagaki, N. ; Sasaki, H. ; Shikida, M. ; Sato, K.
Author_Institution :
Dept. of Micro-Nano Syst. Eng., Nagoya Univ., Nagoya, Japan
Abstract :
We conducted an investigation to find a corrugation removal mechanism selectively by anisotropic wet etching to reduce a periodic corrugation, called "scalloping", formed on the sidewalls of microstructures by Deep Reactive Ion Etching (D-RIE). We analyzed the corrugation removal mechanism by using an etching distribution pattern, and then conducted several equations to predict the corrugation removal time by the etching. We experimentally tried to perform a selective removal of the corrugation by using 50% KOH (40 deg-C). The corrugation formed on Si{100} sidewall surfaces gradually reduced in size with the advance of the etching, and it was completely removed after 5.0 min of etching. The necessary etching time and shape change of the corrugation removal were coincident with the results conducted by the distribution pattern of the etching.
Keywords :
crystal microstructure; elemental semiconductors; micromechanical devices; silicon; sputter etching; MEMS devices; Si; Si{100} sidewall surfaces; anisotropic wet etching; deep reactive ion etching; etching distribution pattern; microcorrugation; microstructures; periodic corrugation; scalloping; Anisotropic magnetoresistance; Corrugated surfaces; Crystallography; Dry etching; Fabrication; Microelectromechanical devices; Micromechanical devices; Microstructure; Shape; Wet etching; Anisotropic Wet Etching; DRIE; Scalloping; corrugation;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285710
