Title :
Design of a novel three-valued static memory using Schottky barrier carbon nanotube FETs
Author :
Raychowdhury, Arijit ; Guo, Jing ; Roy, Kaushik ; Lundstrom, Mark
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
This paper proposes a novel three-state memory using scaled Schottky-barrier carbon nanotube field effect transistors (SB CNFETs). The design utilizes the inherent ambipolar device characteristics of the SB CNFET. Simulation results show ∼37% area reduction and ∼30% reduction of total power in a 64 KB memory array.
Keywords :
Schottky barriers; carbon nanotubes; field effect transistors; nanotube devices; Schottky barrier FET; ambipolar device characteristics; area reduction; carbon nanotube FET; memory array; novel three-valued static memory; three-state memory; CNTFETs; Computational modeling; Digital circuits; Logic circuits; Logic design; MOSFETs; Nanotechnology; Schottky barriers; Silicon; Voltage;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500812
