Title :
The physics of conductivity at terahertz frequencies
Author :
Kirley, Matt P. ; Booske, John H.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Wisconsin-Madison, Madison, WI, USA
Abstract :
Effective terahertz (THz) component and systems design requires accurate predictive models for the frequency-dependent conductivity of materials. We have measured the THz conductivity of metals (including rough surface effects) and doped silicon at 0.4 - 0.85 THz. After a comprehensive analysis, we conclude that the THz-regime conductivity of highly-doped Si is accurately described by Drude theory, while metal conductivity is accurately described by a combination of measured DC conductivity, Drude theory, and the Hammerstad-Bekkadal formula.
Keywords :
electrical conductivity; elemental semiconductors; heavily doped semiconductors; silicon; DC conductivity; Drude theory; Hammerstad-Bekkadal formula; Si; effective terahertz component; frequency 0.4 THz to 0.85 THz; frequency-dependent conductivity; highly-doped silicon; metal conductivity; predictive models; system design; terahertz frequencies; terahertz-regime conductivity; Conductivity; Conductivity measurement; Frequency measurement; Predictive models; Rough surfaces; Surface roughness; Surface topography; Drude; Hammerstad; conductivity; dissipation; surface roughness; terahertz;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7223746
