Design and characterization of metal-molecule-silicon devices

The use of molecular devices for computation shows promise for miniaturizing electronic devices and enhancing integrated circuit functionality. While a majority of molecular devices presented to date employ metal contacts, the use of semiconductor contacts could allow for more stable chemical bonds and improved electrical properties. In this study, we present the grafting and characterization of molecular layers on hydrogenated silicon surfaces using procedures found in the literature. We present the development, fabrication, and measurement of metal-molecule-silicon device structures using traditional lithographic techniques.