DocumentCode :
1859206
Title :
Bandwidth enhancement technique using negative inductance with three FET for the rectangular microstrip antenna
Author :
Kaya, Adnan ; Kilinc, S. ; Yuksel, E. Yesim ; Cam, Ugur
Author_Institution :
Dept. of Electr. & Electron. Eng., Dokuz Eylul Univ., Izmir, Turkey
Volume :
3
fYear :
2004
fDate :
25-28 July 2004
Abstract :
In this study, a novel technique for bandwidth enhancement of a microstrip antenna with a floating negative inductor matching network is presented. A compensation network consisting of three gallium-arsenide field effect transistors is employed at the input of a microstrip antenna operating at 10 GHz. The performance parameters of the designed microstrip antenna with and without compensation network are compared. The simulation results show that compensation network can improve the bandwidth from 17.21% to 32.67%.
Keywords :
III-V semiconductors; compensation; field effect transistors; gallium arsenide; inductance; inductors; microstrip antennas; 10 GHz; FET; GaAs; bandwidth enhancement; compensation network; floating negative inductor matching network; gallium arsenide field effect transistors; negative inductance; rectangular microstrip antenna; Antenna feeds; Bandwidth; Circuits; FETs; Gallium arsenide; Impedance matching; Inductance; Inductors; Microstrip antennas; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2004. MWSCAS '04. The 2004 47th Midwest Symposium on
Print_ISBN :
0-7803-8346-X
Type :
conf
DOI :
10.1109/MWSCAS.2004.1354277
Filename :
1354277
Link To Document :
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