Deposition of highly c-axis-oriented ScAlN thin films by RF magnetron sputtering using a Sc-Al alloy target

Author

Fujii, Shohei ; Shimizu, Shogo ; Sumisaka, M. ; Suzuki, Yuya ; Otomo, S. ; Omori, Tatsuya ; Hashimoto, Koji

Author_Institution

Organ. for Acad.-Ind. Collaboration & Intellectual Property, Chiba Univ., Chiba, Japan

fYear

2014

fDate

19-22 May 2014

Firstpage

1

Lastpage

4

Abstract

High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectricity. Instead of a co-sputtering system, a conventional RF-magnetron sputtering system was employed using a Sc-Al alloy metal target for deposition of ScAlN thin films. Highly c-axis-oriented ScAlN thin films with a Sc concentration of 32 at.% were obtained. We also demonstrate that a one-port surface acoustic wave (SAW) resonator based on the ScAlN/Si structure has a K² value of 1.7% at 2 GHz, which is four times larger than that of the AlN/Si structure.

Keywords

aluminium compounds; piezoelectric thin films; scandium compounds; sputter deposition; surface acoustic wave resonators; RF-magnetron sputtering system; SAW resonator; Sc concentration; Sc-Al alloy metal target; ScAlN; c-axis-oriented thin film deposition; cosputtering system; frequency 2 GHz; one-port surface acoustic wave resonator; piezoelectricity; structural property; Metals; Silicon; Sputtering; Surface acoustic waves; Surface impedance; Surface morphology; Surface treatment; RF magnetron sputtering; SAW resonator; ScAlN;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium (FCS), 2014 IEEE International

Conference_Location

Taipei

Type

conf

DOI

10.1109/FCS.2014.6859938

Filename

6859938