Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTS

Author

Rao, Rapeta V V V J ; Joe, J. ; Chia, Y.W.Michael ; Ang, K.S. ; Wang, H. ; Ng, G.I.

Author_Institution

Centre for Wireless Commun., Nat. Univ. of Singapore, Singapore

Volume

3

fYear

1999

fDate

1999

Firstpage

892

Abstract

A simple and accurate method for extracting on and off state equivalent circuit for double heterojunction δ-doped PHEMTs was developed, which is quite useful for switching applications. The circuit elements are extracted from the S-parameters of PHEMTs. Parasitic inductances L_g, L_d and L_s were determined from the on-wafer-short S-parameter data. We have observed skin effect on the series resistive elements of on-wafer-short, which has been given due consideration in our model. The model has been verified by comparing the measured S-parameter data against those calculated from the on and off state equivalent circuits of PHEMTs

Keywords

S-parameters; equivalent circuits; field effect transistor switches; high electron mobility transistors; microwave field effect transistors; microwave measurement; skin effect; PHEMT switches; S-parameters; double heterojunction δ-doped PHEMT; off state; on state; on-wafer-short; parasitic inductances; series resistive elements; skin effect; small-signal equivalent circuit; Data mining; Equivalent circuits; Heterojunctions; PHEMTs; Phase shifters; Scattering parameters; Skin effect; Switches; Switching circuits; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999 Asia Pacific

Print_ISBN

0-7803-5761-2

Type

conf

DOI

10.1109/APMC.1999.833737

Filename

833737