• DocumentCode
    1859513
  • Title

    Sub-1V ultra low-power voltage reference

  • Author

    Mohammed Abbas, C. ; Shukla, Abhishek ; Kavitha, R.K.

  • Author_Institution
    Dept. of Electron. & Commun., Nat. Inst. of Technol. (NIT), Tiruchirappalli, India
  • fYear
    2015
  • fDate
    8-10 Jan. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents an optimized sublV voltage reference circuit based on the Body-Bias technique [1], which operates at power supply 1V or less. This reference circuit generates a voltage equal to the threshold voltage (at absolute zero temperature) of the transistor used in the design. To achieve zero temperature variations, it compensates temperature variations of thermal voltage, which is Proportional to Absolute Temperature (PTAT) with that of transistor´s threshold voltage, which is Compliment to Absolute Temperature (CTAT). Utilizing the concept of body-bias technique to put the transistors in deep sub-threshold region, successfully achieved ultra-low power design. Design Implementation in 0.18μm achieved a temperature coefficient of best 8PPM and an average Power consumption of the circuit is found to be 135nW.
  • Keywords
    low-power electronics; power consumption; reference circuits; 8PPM; body-bias technique; low-power voltage reference circuit; power 135 nW; power consumption; power supply; size 0.18 mum; threshold voltage; ultra-low power design; voltage 1 V; Batteries; CMOS integrated circuits; MOSFET; Power demand; ADC (Analog to Digital Converter); CTAT; DAC (Digital to Analog Converter); NTC (Negative Temperature coefficient); PTAT; PTC (Positive Temperature coefficient);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Systems, Architecture, Technology and Applications (VLSI-SATA), 2015 International Conference on
  • Conference_Location
    Bangalore
  • Print_ISBN
    978-1-4799-7925-7
  • Type

    conf

  • DOI
    10.1109/VLSI-SATA.2015.7050489
  • Filename
    7050489