DocumentCode :
1859513
Title :
Sub-1V ultra low-power voltage reference
Author :
Mohammed Abbas, C. ; Shukla, Abhishek ; Kavitha, R.K.
Author_Institution :
Dept. of Electron. & Commun., Nat. Inst. of Technol. (NIT), Tiruchirappalli, India
fYear :
2015
fDate :
8-10 Jan. 2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents an optimized sublV voltage reference circuit based on the Body-Bias technique [1], which operates at power supply 1V or less. This reference circuit generates a voltage equal to the threshold voltage (at absolute zero temperature) of the transistor used in the design. To achieve zero temperature variations, it compensates temperature variations of thermal voltage, which is Proportional to Absolute Temperature (PTAT) with that of transistor´s threshold voltage, which is Compliment to Absolute Temperature (CTAT). Utilizing the concept of body-bias technique to put the transistors in deep sub-threshold region, successfully achieved ultra-low power design. Design Implementation in 0.18μm achieved a temperature coefficient of best 8PPM and an average Power consumption of the circuit is found to be 135nW.
Keywords :
low-power electronics; power consumption; reference circuits; 8PPM; body-bias technique; low-power voltage reference circuit; power 135 nW; power consumption; power supply; size 0.18 mum; threshold voltage; ultra-low power design; voltage 1 V; Batteries; CMOS integrated circuits; MOSFET; Power demand; ADC (Analog to Digital Converter); CTAT; DAC (Digital to Analog Converter); NTC (Negative Temperature coefficient); PTAT; PTC (Positive Temperature coefficient);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Systems, Architecture, Technology and Applications (VLSI-SATA), 2015 International Conference on
Conference_Location :
Bangalore
Print_ISBN :
978-1-4799-7925-7
Type :
conf
DOI :
10.1109/VLSI-SATA.2015.7050489
Filename :
7050489
Link To Document :
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