DocumentCode
1859829
Title
Preparation and characterization of nanosized ZnGa2-xCrxO4 phosphors
Author
Wu, She-huang ; Cheng, Hui-Chieh
Author_Institution
Dept. of Mater. Eng., Tatung Univ., Taipei, Taiwan
fYear
2005
fDate
11-15 July 2005
Firstpage
601
Abstract
Cr-doped zinc gallate phosphors were prepared via citric gel route and their luminous properties were characterized by photoluminescence in this study. From the results of XRD studies, it was found that spinel phase formed exclusively in the ZnGa2-xCrxO4 phosphors (O ≤ x ≤ 0.010) prepared by heat-treatment at 700°C for 5 hours and the lattice constant increased linearly from 8.36 to 8.38 Å with the amount of Cr3+-doping. The photoluminescence studies manifested that the absorbance at wavelengths of 437 and 580 nm. All of the prepared phosphors exhibit the characteristic emission peaks at wavelengths of 669, 680, 688, 694, 708, and 713 nm independent of the amount of Cr3+-doping as they were excited with lights of wavelengths of 437 and 580 nm.
Keywords
X-ray diffraction; chromium; gallium compounds; heat treatment; lattice constants; nanostructured materials; nanotechnology; phosphors; photoluminescence; semiconductor doping; ternary semiconductors; zinc compounds; 437 nm; 5 h; 580 nm; 669 nm; 680 nm; 688 nm; 694 nm; 700 degC; 708 nm; 713 nm; Cr-doped zinc gallate phosphors; XRD; ZnGa2-xCrxO4; absorbance; characteristic emission peak; citric gel route; heat treatment; lattice constant; luminous properties; nanosized ZnGa2-xCrxO4 phosphors; photoluminescence; spinel phase; Chromium; Flat panel displays; Gallium; Lattices; Phosphors; Photoluminescence; Solid state circuits; Temperature; X-ray scattering; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN
0-7803-9199-3
Type
conf
DOI
10.1109/NANO.2005.1500843
Filename
1500843
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