Title :
The growth of silicon nanowires using a parallel plate structure
Author :
Hsu, Jung-Fu ; Huang, Bohr-Ran ; Huang, Chien-Sheng
Author_Institution :
Graduate Sch. of Eng. Sci. & Technol., Nat. Yunlin Univ. of Sci. & Technol., Taiwan
Abstract :
Silicon nanowires (SiNWs) were synthesized on both Si and Si3N4/Si substrates via an catalytic reaction in N2 atmosphere at 1000°C using a parallel plate structure. The thickness of the Au catalyst layer varied from 6 nm to 12 nm. Resulting materials were characterized by field-emission scanning electron microscopy (FESEM). The number density and length of nanowires decreased as the thickness of Au layer increased. Moreover, SiNWs could be grown on both the cap and the bottom of the parallel plate structure. Therefore, the parallel plate structure can be used to improve the production of SiNWs.
Keywords :
catalysis; catalysts; elemental semiconductors; field emission electron microscopy; gold; nanotechnology; nanowires; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; silicon; 1000 degC; 6 to 12 nm; Au catalyst layer; FESEM; Si; Si substrates; Si3N4-Si; Si3N4/Si substrates; catalytic reaction; field-emission scanning electron microscopy; number density; parallel plate structure; silicon nanowire growth; Aluminum oxide; Gold; Laser sintering; Nanowires; Nitrogen; Production; Scanning electron microscopy; Silicon alloys; Substrates; Temperature;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500844
