Catalyst free low temperature direct growth of carbon nanotubes

Author

Uchino, T. ; Bourdakos, K.N. ; de Groot, C.H. ; Ashburn, P. ; Wang, S. ; Kiziroglou, M.E. ; Dilliway, G.D. ; Smith, D.C.

Author_Institution

Sch. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

2005

fDate

11-15 July 2005

Firstpage

649

Abstract

A metal catalyst free direct growth process has been developed for the CVD of carbon nanotubes (CNTs) on carbon implanted SiGe islands or Ge dots on Si substrates. From TEM and Raman measurements, the fabricated CNTs are identified as single-walled CNTs (SWNTs) with diameter ranging from 1.2 to 2.1 nm. Essential parts of the substrate preparation after SiGe or Ge dot growth and carbon ion implantation are a chemical oxidation and preheating at 1000°C prior to CNT growth. We believe that the lower melting point of Ge and oxidation enhanced surface decomposition assist the formation of carbon clusters.

Keywords

Raman spectra; carbon nanotubes; chemical vapour deposition; decomposition; melting point; oxidation; transmission electron microscopy; 1.2 to 2.1 nm; 1000 degC; C; CVD; Ge; Raman measurements; Si; SiGe; TEM; carbon ion implantation; carbon nanotubes; islands; melting point; metal catalyst free direct growth process; oxidation enhanced surface decomposition; Carbon nanotubes; Chemical processes; Chemical vapor deposition; Germanium silicon alloys; Ion implantation; Oxidation; Silicon carbide; Silicon germanium; Temperature; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500853

Filename

1500853