• DocumentCode
    1860091
  • Title

    Doubly clamped single-walled carbon nanotube resonators operating in MHz frequencies

  • Author

    Rabieirad, Laleh ; Kim, Sunkook ; Shim, Moonsub ; Mohammadi, Saeed

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2005
  • fDate
    11-15 July 2005
  • Firstpage
    653
  • Abstract
    We report fabrication and experimental characterization of doubly clamped metallic single-walled carbon nanotube (SWNT) resonators. Fabricated resonators are based on CVD grown metallic nanotubes clamped and contacted on both sides and suspended on top of a poly-Si actuation pad. We measured devices with 2 to 3 μm length with resonance frequencies ranging from 11 to 69 MHz. The resonance is observed in atmospheric pressure when peak to peak actuation voltages are around 2 V. We also measured reduction in DC-conductance of suspended SWNTs by applying actuation voltage. The advantages of using poly-Si actuation pad are that devices could be modulated individually through patterned poly-Si pads with minimum parasitic capacitance from the pad to SWNT contacts (high frequency operation is possible) and compatibility of poly-Si with subsequent high temperature growth of SWNTs.
  • Keywords
    capacitance; carbon nanotubes; chemical vapour deposition; nanotechnology; resonators; 11 to 69 MHz; 2 to 3 mum; C; CVD grown metallic nanotubes; DC-conductance; Si; actuation voltages; doubly clamped single-walled carbon nanotube resonators; parasitic capacitance; Atmospheric measurements; Carbon nanotubes; Fabrication; Frequency measurement; Length measurement; Parasitic capacitance; Pressure measurement; Resonance; Resonant frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2005. 5th IEEE Conference on
  • Print_ISBN
    0-7803-9199-3
  • Type

    conf

  • DOI
    10.1109/NANO.2005.1500854
  • Filename
    1500854