DocumentCode
186019
Title
Orientation dependence of nonlinearity and TCf in high-Q shear-modes of silicon MEMS resonators
Author
Haoshen Zhu ; Lee, J.E.-Y.
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong, China
fYear
2014
fDate
19-22 May 2014
Firstpage
1
Lastpage
4
Abstract
This paper reports the first results that correlate nonlinear Duffing behavior and the temperature coefficient of frequency (TCf) in single-crystal-silicon (SCS) micromechanical resonators vibrating in lateral shear-dominant bulk modes, i.e. face shear (FS) and Lamé modes. Based on the anisotropic material property of SCS, we have derived a model to capture the nonlinear responses and the TCf for these devices in different orientations. The model predicts a clear orientation dependence of nonlinearity and temperature stability in SCS microresonators. These results suggest the possibility of reducing both nonlinearity and TCf by engineering the material properties (e.g. doping).
Keywords
crystal resonators; elemental semiconductors; micromechanical resonators; silicon; stability; FS mode; HigHighh-Q shear-mode; Lamé mode; MEMS resonator; SCS; Si; TCf; anisotropic material property; doping; face shear mode; lateral shear-dominant bulk vibrating mode; material property; nonlinear Duffing behavior; single-crystal-silicon micromechanical resonator; temperature coefficient of frequency; temperature stability; Doping; Frequency measurement; Micromechanical devices; Oscillators; Resonant frequency; Silicon; Springs; MEMS resonator; lateral shear mode; nonlinearity; temperature coefficient of frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium (FCS), 2014 IEEE International
Conference_Location
Taipei
Type
conf
DOI
10.1109/FCS.2014.6859981
Filename
6859981
Link To Document