• DocumentCode
    186019
  • Title

    Orientation dependence of nonlinearity and TCf in high-Q shear-modes of silicon MEMS resonators

  • Author

    Haoshen Zhu ; Lee, J.E.-Y.

  • Author_Institution
    Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong, China
  • fYear
    2014
  • fDate
    19-22 May 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper reports the first results that correlate nonlinear Duffing behavior and the temperature coefficient of frequency (TCf) in single-crystal-silicon (SCS) micromechanical resonators vibrating in lateral shear-dominant bulk modes, i.e. face shear (FS) and Lamé modes. Based on the anisotropic material property of SCS, we have derived a model to capture the nonlinear responses and the TCf for these devices in different orientations. The model predicts a clear orientation dependence of nonlinearity and temperature stability in SCS microresonators. These results suggest the possibility of reducing both nonlinearity and TCf by engineering the material properties (e.g. doping).
  • Keywords
    crystal resonators; elemental semiconductors; micromechanical resonators; silicon; stability; FS mode; HigHighh-Q shear-mode; Lamé mode; MEMS resonator; SCS; Si; TCf; anisotropic material property; doping; face shear mode; lateral shear-dominant bulk vibrating mode; material property; nonlinear Duffing behavior; single-crystal-silicon micromechanical resonator; temperature coefficient of frequency; temperature stability; Doping; Frequency measurement; Micromechanical devices; Oscillators; Resonant frequency; Silicon; Springs; MEMS resonator; lateral shear mode; nonlinearity; temperature coefficient of frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium (FCS), 2014 IEEE International
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/FCS.2014.6859981
  • Filename
    6859981