• DocumentCode
    1860270
  • Title

    Integration of aluminium oxide as a passivation layer in a high efficiency industrial process on n-type silicon solar cells

  • Author

    Brand, P. ; Veschetti, Y. ; Sanzone, V. ; Cabal, R. ; Pagés, X. ; Vanormelingen, K. ; Vermont, P.

  • Author_Institution
    LITEN, CEA, Le Bourget du Lac, France
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    This work aims at evaluating aluminium oxide (Al2O3) as an emitter passivation layer for Cz-silicon n-type solar cells fabricated with screen-printed metallization. The effect of firing on the emitter saturation current density obtained with Al2O3/SiNx was studied and compared to the one obtained with thermal SiO2/SiNx. An efficiency of 18.3% was achieved using Al2O3 for n-type solar cells, still limited by a low fill factor due to a high contact resistance.
  • Keywords
    aluminium compounds; contact resistance; current density; metallisation; passivation; silicon compounds; solar cells; Al2O3-SiN; SiO2-SiN; contact resistance; emitter passivation layer; emitter saturation current density; fill factor; n-type silicon solar cells; screen printed metallization; Aluminum oxide; Boron; Firing; Metallization; Passivation; Photovoltaic cells; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186127
  • Filename
    6186127
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1860270