Title :
Industrially feasible >19% efficiency IBC cells for pilot line processing
Author :
Castaño, F.J. ; Morecroft, D. ; Cascant, M. ; Yuste, H. ; Lamers, M.W.P.E. ; Mewe, A.A. ; Romijn, I.G. ; Bende, E.E. ; Komatsu, Y. ; Weeber, A.W. ; Cesar, I.
Author_Institution :
R&D Dept, UPV, Valencia, Spain
Abstract :
Interdigitated Back Contact (IBC) solar cells with >;19% efficiencies have been fabricated using n-type silicon wafers and well-demonstrated high-volume solar cell process technologies alone. Excellent current collection is implied by Jsc values as high as 41.6 mA/cm2. High Pseudo Fill Factors (PFF) of above 81% and reduced Fill Factors (FF) of below 72%, suggest that the primary losses are due to series resistance. The process flow described is currently being transferred to a pilot production line for further process development.
Keywords :
silicon; solar cells; IBC cells; PFF; Si; current collection; high pseudo fill factors; high-volume solar cell process technologies; interdigitated back contact solar cells; n-type silicon wafers; pilot line processing; pilot production line; process development; process flow; reduced fill factors; series resistance; Conductivity; Metallization; Passivation; Photovoltaic cells; Production; Resistance; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186129
