Title :
Phase change material programmable vias for switching and reconfiguration of Aluminum Nitride piezoelectric MEMS resonators
Author :
Hummel, Gwendolyn ; Yu Hui ; Rinaldi, Matteo
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Abstract :
This paper reports on the first demonstration of an innovative approach to switching and reconfiguration of Aluminum Nitride (AlN) piezoelectric Micro Electro Mechanical System (MEMS) resonators using phase change material (PCM) programmable vias. A reconfigurable resonator prototype was fabricated by integrating 2 Ge50Te50 vias in the design of a 200 MHz contour-extensional mode resonator. The capability to reconfigure the device to operate in 3 different states, maintaining constant electromechanical performance (resonator figure of merit, FOM=kt2·Q≈7) was demonstrated: (1) High Impedance state (resonator static capacitance, C0≈660 fF, motional resistance, Rm≈225 Ω), (2) Low Impedance state (C0≈1409 fF; Rm≈90 Ω), and (3) Short state (the resonator is reconfigured into a short circuit).
Keywords :
aluminium compounds; crystal resonators; germanium alloys; microcavities; micromechanical resonators; phase change materials; tellurium alloys; AlN; Ge50Te50; aluminum nitride piezoelectric MEMS resonators; constant electromechanical performance; contour-extensional mode resonator; frequency 200 MHz; low impedance state; motional resistance; phase change material programmable vias; piezoelectric microelectromechanical system resonators; reconfigurable resonator prototype; resonator static capacitance; Capacitance; Electrodes; III-V semiconductor materials; Impedance; Micromechanical devices; Phase change materials; Radio frequency; Aluminum Nitride Resonators; MEMS Resonators; Phase Change Materials; Programmable Resonators; Switching and Reconfiguration of Resonators;
Conference_Titel :
Frequency Control Symposium (FCS), 2014 IEEE International
Conference_Location :
Taipei
DOI :
10.1109/FCS.2014.6859996