DocumentCode
1860480
Title
Implementing narrow front silver gridlines through ink jet machine for high quality contacts to silicon solar cells
Author
Ebong, A. ; Cooper, I.B. ; Tate, K. ; Rounsaville, B. ; Zimbardi, F. ; Upadhyaya, V. ; Rohatgi, A. ; Dovrat, M. ; Kritchman, E. ; Brusilovsky, D. ; Benichou, A.
fYear
2011
fDate
19-24 June 2011
Abstract
In this paper we report on the evaluation of the feasibility of jetting full gridline contacts to fabricate solar cells without additional plating step. We have demonstrated, for the first time, fully ink jetted front Ag gridlines with average line width of only 56.6 μm and height of 30 μm. A high series resistance of 1.1 Ω-cm2 resulted in average fill factor of 0.767 and led to average efficiency of 18.0% on 239 cm2 commercial CZ wafers with sheet resistance of 65-Ω/sq. This result is very promising and leaves room for improvement, especially with optimized finger spacing, improved ink and co-firing process.
Keywords
elemental semiconductors; silicon; silver; solar cells; Si; cofiring process; commercial CZ wafers; high quality contacts; ink jet machine; narrow front silver gridlines; sheet resistance; silicon solar cells; size 30 mum; size 56.6 mum; Firing; Ink; Photovoltaic cells; Printing; Resistance; Semiconductor device modeling; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186132
Filename
6186132
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