• DocumentCode
    1860480
  • Title

    Implementing narrow front silver gridlines through ink jet machine for high quality contacts to silicon solar cells

  • Author

    Ebong, A. ; Cooper, I.B. ; Tate, K. ; Rounsaville, B. ; Zimbardi, F. ; Upadhyaya, V. ; Rohatgi, A. ; Dovrat, M. ; Kritchman, E. ; Brusilovsky, D. ; Benichou, A.

  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    In this paper we report on the evaluation of the feasibility of jetting full gridline contacts to fabricate solar cells without additional plating step. We have demonstrated, for the first time, fully ink jetted front Ag gridlines with average line width of only 56.6 μm and height of 30 μm. A high series resistance of 1.1 Ω-cm2 resulted in average fill factor of 0.767 and led to average efficiency of 18.0% on 239 cm2 commercial CZ wafers with sheet resistance of 65-Ω/sq. This result is very promising and leaves room for improvement, especially with optimized finger spacing, improved ink and co-firing process.
  • Keywords
    elemental semiconductors; silicon; silver; solar cells; Si; cofiring process; commercial CZ wafers; high quality contacts; ink jet machine; narrow front silver gridlines; sheet resistance; silicon solar cells; size 30 mum; size 56.6 mum; Firing; Ink; Photovoltaic cells; Printing; Resistance; Semiconductor device modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186132
  • Filename
    6186132