Analysis of root causes of alpha sensitivity variations on microprocessors manufactured using different cell layouts

Author

Rech, P. ; Grosso, M. ; Melchiori, F. ; Loparco, D. ; Appello, D. ; Dilillo, L. ; Paccagnella, A. ; Reorda, M. Sonza

Author_Institution

LIRMM, Univ. Montpellier 2, Montpellier, France

fYear

2010

fDate

5-7 July 2010

Firstpage

29

Lastpage

34

Abstract

This paper reports and analyzes the results of alpha radiation testing campaigns on an embedded microprocessor manufactured with different standard cell libraries, each one enforcing Design for Manufacturing rules at a specific level. A set of analog simulations has been performed on flip-flops built with different physical layouts to reproduce and evaluate the effects of ionizing particles. The results of simulation experiments are presented and discussed, highlighting the configurations which are more likely to improve the system reliability, and then compared with radiation experiments data. Finally, we give a physical interpretation of the observed variations on radiation sensitivity.

Keywords

alpha-particle effects; design for manufacture; embedded systems; flip-flops; integrated circuit layout; integrated circuit manufacture; integrated circuit reliability; integrated circuit testing; microprocessor chips; radiation hardening (electronics); alpha radiation testing; alpha sensitivity variation; analog simulations; cell layout; design for manufacturing; embedded microprocessor; flip flops; ionizing particle effect; radiation sensitivity; system reliability; Error analysis; Flip-flops; Layout; Libraries; Microprocessors; Optimization; Transistors; Design for Manufacturing; Single Event Upset; microprocessor; radiation testing;

fLanguage

English

Publisher

ieee

Conference_Titel

On-Line Testing Symposium (IOLTS), 2010 IEEE 16th International

Conference_Location

Corfu

Print_ISBN

978-1-4244-7724-1

Type

conf

DOI

10.1109/IOLTS.2010.5560236

Filename

5560236