Design of a resonant-cavity-enhanced p-i-n GaN/Al/sub x/Ga/sub 1-x/N ultraviolet photodetector

Author

Li, Tong ; Carrano, J.C. ; Eiting, C.J. ; Grudowski, P.A. ; Lambert, D.J.H. ; Kwon, H.K. ; Dupuis, R.R. ; Campbell, Joe C. ; Tober, R.T.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

fYear

1999

fDate

28-28 May 1999

Firstpage

23

Lastpage

24

Abstract

Summary form only given The Al/sub x/Ga/sub 1-x/N material system is well suited as a photodetector material in the ultra-violet (UV) spectrum (from 200 to 365 nm). Previously, we have achieved high quantum efficiencies and low dark currents on GaN-based metal-semiconductor-metal photodetectors and p-i-n photodetectors. To attain wavelength selectivity, high quantum efficiency, and high speed, we have applied the resonant cavity concept to Al/sub x/Ga/sub 1-x/N based photodetectors.

Keywords

III-V semiconductors; dark conductivity; gallium compounds; optical design techniques; optical resonators; p-i-n photodiodes; photodetectors; ultraviolet detectors; 200 to 365 nm; Al/sub x/Ga/sub 1-x/N based photodetectors; Al/sub x/Ga/sub 1-x/N material system; GaN-AlGaN; GaN-based metal-semiconductor-metal photodetectors; high quantum efficiencies; high quantum efficiency; high speed; low dark currents; p-i-n photodetectors; photodetector material; resonant cavity concept; resonant-cavity-enhanced p-i-n GaN/Al/sub x/Ga/sub 1-x/N ultraviolet photodetector design; ultra-violet spectrum; wavelength selectivity; Absorption; Annealing; Australia; Distributed Bragg reflectors; Gallium nitride; PIN photodiodes; Photodetectors; Protons; Reflectivity; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.833825

Filename

833825