Title :
Substrate-thinned indium gallium arsenide/indium phosphide focal plane arrays for imaging from the visible through the near infrared
Author :
Lange, M.J. ; Ettenberg, M.H. ; Olsen, G.H. ; Vermaak, J.S. ; Cohen, M.J. ; Sugg, A.R. ; Forrest, S.R. ; Dries, J.C.
Author_Institution :
Sensors Unlimited Inc., Princeton, NJ, USA
Abstract :
Summary form only given. A high-performance camera, based on a 320/spl times/240 element array of indium gallium arsenide (In/sub .53/Ga/sub .47/As) photodiodes, has been specially fabricated to allow detection of light from the visible through the near infrared (0.5 /spl mu/m to 1.7 /spl mu/m). The overall structures of the starting epitaxial wafers and the final focal plane array are shown.
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; optical arrays; photodiodes; 0.5 to 1.5 mum; 320/spl times/240 element array; In/sub .53/Ga/sub .47/As photodiodes; In/sub 0.53/Ga/sub 0.47/As; final focal plane array; image sensors; indium gallium arsenide; overall structure; starting epitaxial wafers; substrate-thinned focal plane arrays; Etching; Indium gallium arsenide; Indium phosphide; Optical modulation; Optical pumping; Optical sensors; PIN photodiodes; Sensor arrays; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.833826
