Title :
Characteristics of an infrared sensitive InGaAs-liquid crystal optically addressed spatial light modulator
Author :
Liu, Yong-Cai ; Barbier, P.R. ; Johnson, Y. ; Ho, P.-T.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Summary form only given. We report on the fabrication and performance characterization of the first pixelated infrared-sensitive optically addressed spatial light modulator (OASLM) made of nematic liquid crystal (NLC) and InGaAs p-i-n photosensor array. We fabricated a low dark-current, high-responsivity InGaAs p-i-n photodiode array with a broad spectral responsivity. The 2-/spl mu/m thick InGaAs p-i-n photodiode was grown by molecular beam epitaxy on an InP substrate.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; liquid crystal devices; molecular beam epitaxial growth; p-i-n photodiodes; spatial light modulators; 2 mum; InGaAs; InGaAs p-i-n photodiode; InGaAs p-i-n photosensor array; InP substrate; MBE; broad spectral responsivity; high-responsivity InGaAs p-i-n photodiode array; infrared sensitive InGaAs-liquid crystal optically addressed spatial light modulator; infrared-sensitive optically addressed spatial light modulator; low dark-current; molecular beam epitaxy; nematic liquid crystal; pixelated IR-sensitive optically addressed spatial light modulator fabrication; Indium gallium arsenide; Indium phosphide; Liquid crystals; Molecular beam epitaxial growth; Optical arrays; Optical device fabrication; Optical modulation; Optical sensors; PIN photodiodes; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.833827
