DocumentCode :
1860790
Title :
A 9-bit 150-MS/s 1.53-mW subranged SAR ADC in 90-nm CMOS
Author :
Lin, Ying-Zu ; Liu, Chun-Cheng ; Huang, Guan-Ying ; Shyu, Ya-Ting ; Chang, Soon-Jyh
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2010
fDate :
16-18 June 2010
Firstpage :
243
Lastpage :
244
Abstract :
This paper reports a subranged SAR ADC consisting of a 3.5-bit flash coarse ADC, a 6-bit SAR fine ADC, and a differential segmented capacitive DAC. The flash ADC controls thermometer MSBs of the DAC and SAR ADC controls the binary LSBs. The segmented DAC improves DNL during MSB transitions. The merged switching of MSB capacitors enhances operation speed. The 9-bit 150-MS/s ADC consumes 1.53 mW from a 1.2-V supply. The ENOB is 8.69 bit and ERBW is 100 MHz. The FOMs at 1.2 V, 150 MS/s and 1 V, 100 MS/s are 24.7 and 17.7 fJ/conversion-step, respectively. At 1.3-V supply voltage, the sampling rate achieves 200 MS/s.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; 3.5-bit flash coarse ADC; 6-bit SAR fine ADC; CMOS; MSB capacitors; binary LSB; differential segmented capacitive DAC; flash ADC controls; frequency 100 MHz; power 1.53 mW; size 90 nm; subranged SAR ADC; thermometer MSB; voltage 1.2 V; voltage 1.3 V; Accuracy; Capacitance; Capacitors; Frequency measurement; Linearity; Preamplifiers; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits (VLSIC), 2010 IEEE Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5454-9
Type :
conf
DOI :
10.1109/VLSIC.2010.5560246
Filename :
5560246
Link To Document :
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