GaAs/Al/sub x/Ga/sub 1-x/As quantum cascade lasers

Author

Sirtori, C. ; Kruck, P. ; Barbieri, S. ; Collot, P. ; Nagle, J. ; Beck, M. ; Faist, J. ; Oesterle, U.

Author_Institution

lab. Central de Recherches, Thomson CSF, Orsay, France

fYear

1999

fDate

28-28 May 1999

Firstpage

25

Lastpage

26

Abstract

Summary form only given. Since their first demonstration in 1995 quantum cascade (QC) lasers have been made only in GaInAs-AlInAs heterostructures grown lattice matched on InP. This is somewhat in contradiction with the principles of QC lasers which, based on intersubband transitions, should be independent of the specific semiconductor heterostructure used. By fabricating QC lasers in the AlGaAs-GaAs we demonstrate that the fundamental concepts and design criteria can be truly extended in other material systems, still preserving the same basic characteristics in terms of threshold currents and output power.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; quantum well lasers; AlGaAs-GaAs; GaAs/Al/sub x/Ga/sub 1-x/As quantum cascade lasers; GaInAs-AlInAs; GaInAs-AlInAs heterostructures; InP; QC lasers; basic characteristics; design criteria; fundamental concepts; intersubband transitions; lattice matched; output power; semiconductor heterostructure; threshold currents; Gallium arsenide; Indium phosphide; Laser transitions; Lattices; Optical design; Optical materials; Power lasers; Quantum cascade lasers; Semiconductor lasers; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.833829

Filename

833829