• DocumentCode
    1860942
  • Title

    Deployment of Impurity-to-Efficiency (I2E) simulation tool

  • Author

    Powell, D.M. ; Fenning, D.P. ; Conrad, B.S. ; Hofstetter, J. ; Leliévre, J.F. ; Cañizo, C. Del ; Buonassisi, T.

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    Metal impurities can limit the performance of crystalline silicon solar cells. We have created an Impurity-to-Efficiency (I2E) simulation tool that predicts the impact of as-grown iron impurities on final solar cell performance as a function of device processing conditions and cell architecture. Iron has been selected for initial study because it is a dominant metal impurity in silicon solar cells [1]. The tool highlights the importance of tailoring device-processing conditions to specific distributions and concentrations of iron in as-grown wafers. The tool consists of three coupled components: a kinetic simulation, a minority carrier lifetime calculator, and the PC1D device simulator [2]. We have deployed the simulator in a free web-accessible applet for use by the industrial and academic communities. The tool can be used to increase the performance of iron-limited cells by completing rapid process optimization studies.
  • Keywords
    carrier lifetime; elemental semiconductors; minority carriers; power engineering computing; silicon; solar cells; PC1D device simulator; as-grown iron impurities; cell architecture; crystalline silicon solar cells; impurity-to-efficiency simulation tool; kinetic simulation; metal impurity; minority carrier lifetime calculator; rapid process optimization; web-accessible applet; Computer architecture; Iron; Microprocessors; Performance evaluation; Photovoltaic cells; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186150
  • Filename
    6186150