DocumentCode
1861138
Title
Simulation of high frequency structure for Extended Interaction Oscillator
Author
Dong Liu ; Wenxin Liu ; Yong Wang
Author_Institution
Inst. of Electron., Beijing, China
fYear
2015
fDate
27-29 April 2015
Firstpage
1
Lastpage
2
Abstract
For the researches of Extended Interaction Oscillator (EIO) with frequency exceed 300GHz, the parameters of high frequency structure are optimum with a help of CST studio. The parameters including width of waveguide, the length of waveguide, the height of waveguide, the number of periodic structure, the radius of electron beam tunnel and the thickness of metal between nearby waveguide are studied. The results show that the out signal with a band 10GHz are obtained at the optimum parameters.
Keywords
millimetre wave oscillators; waveguides; CST studio; EIO; bandwidth 10 GHz; electron beam tunnel; extended interaction oscillator; frequency 300 GHz; high frequency structure; metal thickness; waveguide height; waveguide length; waveguide width; Bandwidth; Electron beams; Metals; Oscillators; Periodic structures; Scattering parameters; Waveguide transitions; Bandwidth; EIO; Loss; S Parameter;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location
Beijing
Print_ISBN
978-1-4799-7109-1
Type
conf
DOI
10.1109/IVEC.2015.7223825
Filename
7223825
Link To Document