• DocumentCode
    1861436
  • Title

    High-brightness /spl alpha/DFB arrays at 915 nm and 1.06 /spl mu/m

  • Author

    Wong, V.V. ; Schoenfelder, A. ; O´Brien, S. ; DeMars, S.D. ; Lang, R.J.

  • Author_Institution
    SDL Inc., San Jose, CA, USA
  • fYear
    1999
  • fDate
    28-28 May 1999
  • Firstpage
    46
  • Lastpage
    47
  • Abstract
    Summary form only given. We present the first reported results for linear arrays of /spl alpha/DFB lasers in the 915 nm and 1064 nm wavelength regimes with record high brightness values. We also present results for a 2D array of /spl alpha/DFB lasers at 915 nm with a record high brightness using a novel stacking architecture. To our knowledge, this is the highest reported brightness from a multi-Watt semiconductor laser source and is over a factor of 5X higher than the accessible brightness of the highest-power broad-area bars reported to date. High-brightness laser diode arrays are attractive sources for applications such as soldering, heat treatment, marking and pumping of solid state lasers.
  • Keywords
    brightness; distributed feedback lasers; laser transitions; semiconductor laser arrays; 1.06 mum; 2D array; 915 nm; broad-area bars; heat treatment; high-brightness /spl alpha/DFB arrays; laser diode arrays; linear arrays; marking; multi-Watt semiconductor laser source; soldering; solid state laser pumping; stacking architecture; Bars; Brightness; Diode lasers; Heat pumps; Heat treatment; Optical arrays; Pump lasers; Semiconductor laser arrays; Soldering; Stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-595-1
  • Type

    conf

  • DOI
    10.1109/CLEO.1999.833856
  • Filename
    833856