DocumentCode
1861498
Title
Direct formation of parallel single-walled carbon nanotube bridges on micromachined wide trenches for high-performance infrared sensors
Author
Rao, F.B. ; Li, T. ; Zhou, Y.X. ; Liu, X. ; Zhou, P. ; Wang, Y.L.
Author_Institution
State Key Lab. of Transducer Technol., Nat. Key Lab. of Microsyst. Technol., Shanghai, China
fYear
2009
fDate
21-25 June 2009
Firstpage
1501
Lastpage
1504
Abstract
We present the integration of super long horizontally aligned single-walled carbon nanotubes (SWNTs) on the micromachined wide trenches for infrared (IR) sensor application. The HA-SWNTs were found to be able to grow across trenches as wide as 1000 mum forming parallel SWNT bridges on the trench. The sensor fabricated with only one process shows sharp and remarkable responses to the ~ 4 mW IR radiations at 77 K. Its response to IR radiation of 120 Hz at room temperature in air could be easily observed. The response time constant, only ~500 mus, is more than 2 orders magnitude shorter than that of the reported IR sensors based on SWNT bundles, films and SWNT-polymer composites. It was believed to be achieved due to the absence of intertube junctions in our suspending parallel HA-SWNT bridges.
Keywords
carbon nanotubes; infrared detectors; micromachining; C; IR sensors; frequency 120 Hz; high performance infrared sensors; micromachined wide trenches; parallel SWNT bridges; single walled carbon nanotube bridges; temperature 77 K; Bridge circuits; Carbon nanotubes; Delay; Etching; Fabrication; Infrared sensors; Laboratories; Lithography; Resists; Transducers; Single-walled carbon nanotube; horizontally aligned; infrared sensors; micromachining;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location
Denver, CO
Print_ISBN
978-1-4244-4190-7
Electronic_ISBN
978-1-4244-4193-8
Type
conf
DOI
10.1109/SENSOR.2009.5285800
Filename
5285800
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