Investigation of electronic noise in THz SiGe HBTs by microscopic simulation

Author

Jungemann, Christoph ; Sung-Min Hong

Author_Institution

Electromagn. Theor., RWTH Aachen Univ., Aachen, Germany

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

1

Lastpage

8

Abstract

Noise in an ultimate SiGe HBT with peak cutoff and maximum oscillation frequencies above 1THz is investigated by a microscopic transport model based on the Boltzmann equation, which can handle the quasi-ballistic transport, high frequencies and the complicated band structure in such devices. The noise performance of the transistor is excellent due to the high intrinsic speed. For example, the minimum noise figure can be as low as 0.7dB at 100GHz for this intrinsic device. A drawback of this device is the low collector/emitter breakdown voltage and above this voltage impact ionization degrades the noise performance.

Keywords

Boltzmann equation; Ge-Si alloys; ballistic transport; band structure; heterojunction bipolar transistors; impact ionisation; semiconductor device breakdown; semiconductor device noise; submillimetre wave transistors; Boltzmann equation; SiGe; THz HBT; band structure; breakdown voltage; electronic noise; high frequencies; high intrinsic speed; maximum oscillation frequencies; microscopic simulation; microscopic transport model; peak cut-off frequencies; quasiballistic transport; voltage impact ionization; Cutoff frequency; Gain; Heterojunction bipolar transistors; Mathematical model; Noise; Silicon germanium; Bipolar transistor; bipolar modeling and simulation; device physics; electronic noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798131

Filename

6798131