DocumentCode
1861820
Title
Investigation of power and linearity performance for low- and high-voltage SiGe HBTs
Author
Dinh, Thanh Vinh ; Pijper, R. ; Vanhoucke, T. ; Gridelet, E. ; Klaassen, D.B.M.
Author_Institution
NXP Semicond. Res., Leuven, Belgium
fYear
2013
fDate
Sept. 30 2013-Oct. 3 2013
Firstpage
9
Lastpage
12
Abstract
Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which indicates the limitation of each type of device for RF power amplifier applications.
Keywords
avalanche breakdown; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; HBT linearity; HBT power; Kirk effect; RF power amplifier; SiGe; avalanche effect; heterojunction bipolar transistors; on wafer measurements; Harmonic analysis; Linearity; Power measurement; Power system harmonics; Radio frequency; Silicon germanium; Transient analysis; Low voltage; SiGe HBTs; breakdown; cut-off frequency; high voltage; large signal; linearity; power; small signal;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location
Bordeaux
ISSN
1088-9299
Print_ISBN
978-1-4799-0126-5
Type
conf
DOI
10.1109/BCTM.2013.6798132
Filename
6798132
Link To Document