56 MHZ piezoresistive micromechanical oscillator

Author

Bontemps, J.M. ; Murroni, A. ; van Beek, J.T.M. ; van den Homberg, J.A.T.M. ; Koning, J.J. ; Koops, G.E.J. ; Verheijden, G. J A M ; van Wingerden, J. ; Phan, K.L. ; Vermeeren, P. ; van der Avoort, C. ; Beijerinck, H.C. ; Baltus, P.G.M.

Author_Institution

Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2009

fDate

21-25 June 2009

Firstpage

1433

Lastpage

1436

Abstract

A fully functional oscillator has been developed, based on a resonator with an electrostatic-to-piezoresistive transduction. Both resonator and amplifier IC have been processed on a SOI wafer with identical SOI layer thickness of 1.5 mum. The resonator is a bulk-acoustic ´dogbone´ design, for which an extended electrical model is presented. At an oscillation frequency of 56.1 MHz the oscillator consumes 6.1 mW and reaches a phase noise of -102 dBc/Hz at 1 kHz offset from carrier.

Keywords

electrostatic devices; micromechanical resonators; oscillators; piezoresistive devices; silicon-on-insulator; SOI wafer; amplifier IC; bulk-acoustic dogbone design; electrical model; electrostatic-to-piezoresistive transduction; frequency 56 MHz; piezoresistive micromechanical oscillator; power 6.1 mW; resonator; Capacitive sensors; Frequency; Impedance; Micromechanical devices; Oscillators; Phase noise; Piezoresistance; Resonance; Silicon on insulator technology; Springs; MEMS resonator; Reference oscillator; phase noise; piezoresistive; silicon-on-insulator technology (SOI);

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285812

Filename

5285812