Title :
A scalable model for temperature dependent thermal resistance of SiGe HBTs
Author :
Sahoo, Abhaya Kumar ; Fregonese, Sebastien ; Weiss, Michael ; Maneux, Cristell ; Zimmer, T.
Author_Institution :
Lab. IMS, Univ. de Bordeaux 1, Talence, France
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
This paper presents a geometry scalable approach for temperature dependent thermal resistance (RTH) calculations in trench-isolated SiGe heterojunction bipolar transistors (HBTs). The model is able to predict the RTH at any temperature and power dissipation (Pdiss). The temperature dependency is obtained by discretizing the heat flow region into n-number of elementary slices depending on the temperature gradient. RTHs of each slice are calculated using temperature dependent thermal conductivity. The results are compared to 3D thermal TCAD simulations for a wide range of ambient temperature (Tamb), Pdiss and device dimensions. Finally, the scalability is validated through measurements of several transistor geometries as well as two different technologies and found to be in good agreement.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; thermal conductivity; thermal resistance; 3D thermal TCAD simulations; HBTs; SiGe; ambient temperature; device dimensions; elementary slices; geometry scalable approach; heat flow region; power dissipation; temperature dependent thermal conductivity; temperature dependent thermal resistance; temperature gradient; transistor geometry; trench-isolated heterojunction bipolar transistors; Analytical models; Geometry; Heating; Temperature dependence; Temperature measurement; Thermal resistance; Transistors; Electrothermal effects; Heterojunction Bipolar Transistors; Numerical simulation; Semiconductor device measurements; Thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798137
