Advanced extraction procedure for parasitic collector series resistance contributions in high-speed BiCMOS technologies

Author

Stein, Fridtjof ; Derrier, N. ; Maneux, Cristell ; Celi, D.

Author_Institution

STMicroelectron., Crolles, France

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

33

Lastpage

36

Abstract

The parasitic collector resistance is of high importance for device performance of HBT manufactured in advanced SiGe technologies. The external collector resistance contribution RCx is a critical modeling parameter for AC and transient operation. If the collector resistance is estimated incorrectly, the RF performance of the modeled device may significantly differ from the manufactured HBT. An advanced test structure for resistance extraction is presented and measured in two different ways. The obtained resistance values and extraction results are verified using analytical equations and quasi-three-dimensional device simulations.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; HBT; RF performance; SiGe; advanced extraction procedure; analytical equations; high-speed BiCMOS technology; parasitic collector series resistance; quasithree-dimensional device simulations; resistance extraction; Current measurement; Electrical resistance measurement; Geometry; Layout; Length measurement; Periodic structures; Resistance; Collector Resistance; Device Modeling; HBT; Heterojunction Bipolar Transistor; SiGe; Silicon Germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798138

Filename

6798138