Title :
Solid-immersion photoluminescence imaging and spectroscopy with high-spatial resolution on GaAs nanostructures
Author :
Yoshita, Masahiro ; Baba, M. ; Akiyama, Hidenori
Author_Institution :
Inst. for Solid State Phys., Tokyo Univ., Japan
Abstract :
Summary form only given. The solid immersion lens (SIL) is an aberration-free solid lens of high refractive index material with a truncated-sphere shape. Combining the SIL with a standard optical microscope, PL imaging with high-spatial resolution and high collection efficiency was demonstrated. In this work we applied the SIL to microscopic photoluminescence (micro-PL) spectroscopy and imaging to characterize local electronic properties and real-space carrier migration of sub-/spl mu/m-scale in facet-growth GaAs quantum well (QW) structures.
Keywords :
III-V semiconductors; gallium arsenide; nanostructured materials; optical microscopy; photoluminescence; semiconductor quantum wells; GaAs; GaAs nanostructures; PL imaging; aberration-free solid lens; facet-growth GaAs quantum well structures; high collection efficiency; high-spatial resolution; micro-PL; microscopic photoluminescence; optical microscope; real-space carrier migration; solid immersion lens; solid-immersion photoluminescence imaging; spectroscopy; sub-/spl mu/m-scale; truncated-sphere shape; High-resolution imaging; Lenses; Optical imaging; Optical materials; Optical microscopy; Photoluminescence; Refractive index; Shape; Solids; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.833886
