10 Bit and 12 Bit data conversion achievements at microwave frequencies on 200GHz SiGeC (Bipolar) and 120GHz 0.18µm BiCMOS technology

Author

Wingender, Marc ; Bore, Francois ; Chantier, Nicolas ; Glascott-Jones, Andrew ; Bouin, Etienne ; Amblard, Jean-Philippe

Author_Institution

High-Reliability Semicond. Div., e2v, St. Egreve, France

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

53

Lastpage

60

Abstract

This paper describes design techniques for Bipolar and BiCMOS analog circuits. Comparison on such performances as transconductance, speed, matching, noise of bipolar and CMOS transistors are reviewed and compared. Design achievements such as a single core 12 Bit 1.5GS/s Analog to Digital Converter (ADC) [1] and a single core 12 Bit 3GS/s Digital to Analog Converters (DAC) [2] based on a fully bipolar 200GHz SiGeC technology are introduced to illustrate the advantages and drawbacks of a fully bipolar technology for high speed data converters. A Quad 10 Bit 5GS/s ADC based on 4 interleaved ADC Core designed with a 120 GHz 0.18um BiCMOS technology is also presented, to illustrate the advantages brought by the combination of Bipolar and CMOS technologies.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; carbon; digital-analogue conversion; field effect MIMIC; semiconductor materials; BiCMOS analog circuits; BiCMOS technology; CMOS transistors; DAC; SiGeC; analog to digital converter; bipolar analog circuits; frequency 20 GHz; frequency 200 GHz; fully bipolar technology; high speed data converters; interleaved ADC core; single core digital to analog converters; size 0.8 mum; word length 10 bit; word length 12 bit; BiCMOS integrated circuits; CMOS integrated circuits; Calibration; Clocks; Noise; Resistors; Transistors; 12 Bit Broadband Data converters; Calibration Issues; High IF digitizing and synthesing; Multi-Nyquist operation; Noise and matching issues; SiGe/SiGeC BiCMOS process; SiGeC fully Bipolar process; Single Core ADC and DAC Architecture; Spectral purity Noise Power Ratio (NPR); Time interleaved Architectures; Transistor cutoff frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798143

Filename

6798143