Title :
A 4GS/s 8bit ADC fabricated in 0.35µm SiGe BiCMOS technology
Author :
Danyu Wu ; Fan Jiang ; Lei Zhou ; Jin Wu ; Yinkun Huang ; Zhi Jin ; Xinyu Liu
Author_Institution :
Microwave Device & Integrated Circuits Dept., Inst. of Microelectron., Beijing, China
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
In this paper, a low cost 4GS/s 8bit Folding-and-Interpolation (F&I) ADC has been demonstrated. To avoid threshold-mismatch and delay-mismatch between coarse and fine quantizer, a novel coarse quantizer with analog pre-processing circuits are proposed. According to the measurement result, the proposed coarse quantizer has successfully eliminated the glitch code. The ADC is capable of sampling analog input frequencies up to 1.5GHz with greater than 7.0 effective number of bits (ENOB) performance. The ADC has a die size of 3.8×3.8 mm2 and consumes 4.1W of power.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; analogue processing circuits; analogue-digital conversion; ADC; BiCMOS technology; SiGe; analog input frequencies; analog preprocessing circuits; coarse quantizer; delay mismatch; glitch code; power 4.1 W; size 0.35 mum; threshold mismatch; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Feeds; Interpolation; Silicon germanium; Synchronization; Folding and Interpolating; SiGe BiCMOS; Time-Interleaved; analog pre-processing circuits;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798146
