DocumentCode :
1862169
Title :
Spectroscopic imaging study on CIGS thin film solar cells
Author :
Nam, Dahyun ; Park, Doyoung ; Jung, Sunghun ; Gwak, Jihye ; Ahn, Sejin ; Yun, Jae Ho ; Yoon, Kyunghoon ; Cheong, Hyeonsik
Author_Institution :
Dept. of Phys., Sogang Univ., Seoul, South Korea
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Cu(In1-xGax)Se (CIGS) based thin film solar cells are usually built by depositing CdS as a buffer layer and ZnO as a window layer on top of the CIGS absorber layer. In order to optimize their performances, it is essential to understand the interactions between the layers. In this study, we have investigated the interactions between the layers by examining the optical properties of the CIGS solar cell structure at each step of the fabrication process-CIGS, CIGS/CdS, and CIGS/CdS/ZnO- using photoluminescence and Raman spectroscopic imaging techniques. The images of the intensity of the Raman peak at 175 cm-1 due to the A1 vibration mode show that the homogeneity improves after CdS deposition. Micro-PL intensity imaging also confirmed this observation. Furthermore, the PL peak intensity and the energy position vary after each layer deposition.
Keywords :
II-VI semiconductors; Raman spectroscopy; cadmium compounds; copper compounds; gallium compounds; indium compounds; photoluminescence; semiconductor thin films; solar cells; zinc compounds; CIGS thin film solar cells; Cu(InGa)Se-CdS-ZnO; PL peak intensity; Raman spectroscopic imaging techniques; absorber layer; buffer layer; energy position; fabrication process; layer deposition; microPL intensity imaging; optical properties; photoluminescence; vibration mode; window layer; Buffer layers; Measurement by laser beam; Microscopy; Photovoltaic cells; Raman scattering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186200
Filename :
6186200
Link To Document :
بازگشت