DocumentCode
1862169
Title
Spectroscopic imaging study on CIGS thin film solar cells
Author
Nam, Dahyun ; Park, Doyoung ; Jung, Sunghun ; Gwak, Jihye ; Ahn, Sejin ; Yun, Jae Ho ; Yoon, Kyunghoon ; Cheong, Hyeonsik
Author_Institution
Dept. of Phys., Sogang Univ., Seoul, South Korea
fYear
2011
fDate
19-24 June 2011
Abstract
Cu(In1-xGax)Se (CIGS) based thin film solar cells are usually built by depositing CdS as a buffer layer and ZnO as a window layer on top of the CIGS absorber layer. In order to optimize their performances, it is essential to understand the interactions between the layers. In this study, we have investigated the interactions between the layers by examining the optical properties of the CIGS solar cell structure at each step of the fabrication process-CIGS, CIGS/CdS, and CIGS/CdS/ZnO- using photoluminescence and Raman spectroscopic imaging techniques. The images of the intensity of the Raman peak at 175 cm-1 due to the A1 vibration mode show that the homogeneity improves after CdS deposition. Micro-PL intensity imaging also confirmed this observation. Furthermore, the PL peak intensity and the energy position vary after each layer deposition.
Keywords
II-VI semiconductors; Raman spectroscopy; cadmium compounds; copper compounds; gallium compounds; indium compounds; photoluminescence; semiconductor thin films; solar cells; zinc compounds; CIGS thin film solar cells; Cu(InGa)Se-CdS-ZnO; PL peak intensity; Raman spectroscopic imaging techniques; absorber layer; buffer layer; energy position; fabrication process; layer deposition; microPL intensity imaging; optical properties; photoluminescence; vibration mode; window layer; Buffer layers; Measurement by laser beam; Microscopy; Photovoltaic cells; Raman scattering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186200
Filename
6186200
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