• DocumentCode
    1862169
  • Title

    Spectroscopic imaging study on CIGS thin film solar cells

  • Author

    Nam, Dahyun ; Park, Doyoung ; Jung, Sunghun ; Gwak, Jihye ; Ahn, Sejin ; Yun, Jae Ho ; Yoon, Kyunghoon ; Cheong, Hyeonsik

  • Author_Institution
    Dept. of Phys., Sogang Univ., Seoul, South Korea
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    Cu(In1-xGax)Se (CIGS) based thin film solar cells are usually built by depositing CdS as a buffer layer and ZnO as a window layer on top of the CIGS absorber layer. In order to optimize their performances, it is essential to understand the interactions between the layers. In this study, we have investigated the interactions between the layers by examining the optical properties of the CIGS solar cell structure at each step of the fabrication process-CIGS, CIGS/CdS, and CIGS/CdS/ZnO- using photoluminescence and Raman spectroscopic imaging techniques. The images of the intensity of the Raman peak at 175 cm-1 due to the A1 vibration mode show that the homogeneity improves after CdS deposition. Micro-PL intensity imaging also confirmed this observation. Furthermore, the PL peak intensity and the energy position vary after each layer deposition.
  • Keywords
    II-VI semiconductors; Raman spectroscopy; cadmium compounds; copper compounds; gallium compounds; indium compounds; photoluminescence; semiconductor thin films; solar cells; zinc compounds; CIGS thin film solar cells; Cu(InGa)Se-CdS-ZnO; PL peak intensity; Raman spectroscopic imaging techniques; absorber layer; buffer layer; energy position; fabrication process; layer deposition; microPL intensity imaging; optical properties; photoluminescence; vibration mode; window layer; Buffer layers; Measurement by laser beam; Microscopy; Photovoltaic cells; Raman scattering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186200
  • Filename
    6186200