Title :
Optimization of back contacts for CdTe solar cells using sputtered CuxTe
Author :
Nawarange, A.V. ; Compaan, A.D.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
Abstract :
For cadmium telluride solar cells, the back contact material and its properties are still a challenge in terms of increasing and stabilizing the efficiency. This paper discusses RF magnetron sputtering of three different stoichiometries of CuxTe (x= 1, 1.4, 2) material for back contacts to sputtered CdTe solar cells. Thin films were grown first on aluminosilicate glass (ASG) to optimize resistivity, carrier concentration, and mobility and to identify the crystallographic phases of CuxTe. Films were then deposited on complete cell structures to determine efficiency and other cell performance parameters. Thickness and post-deposition annealing temperature were varied to optimize cell performance. Among the three compositions, the Cu2Te target produced the best efficiency at 200°C substrate temperature using conditions that yielded Cu1.4Te as the dominant phase in the sputtered films. This produced cells with efficiency of >;13%.
Keywords :
III-VI semiconductors; annealing; cadmium compounds; carrier mobility; copper compounds; electrical resistivity; semiconductor growth; semiconductor thin films; solar cells; sputtered coatings; tellurium compounds; ASG; CdTe; CuXTe; RF magnetron sputtering; aluminosilicate glass; back contacts; back contacts optimization; cadmium telluride solar cells; carrier concentration; carrier mobility; cell performance parameters; crystallographic phases; post-deposition annealing temperature; resistivity; sputtered films; thin films; Annealing; Conductivity; Copper; Films; Substrates; Temperature measurement; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186201