Device parameters of Cu2ZnSnS4 thin film solar cell

Measurement of solar cell AC parameters (cell capacitance and resistance) is important for the design of fast, reliable and efficient power conditioners. Capacitance measurements and time domain measurements are required to completely characterize solar cells. In the present study, a Cu₂ZnSnS₄/ZnS heterojunction solar cell with device efficiency of 1.16% was fabricated. The ideality factor, open circuit voltage, short circuit current, fill factor and reverse saturation current were extracted from the device characteristic curves. The ac parameters were measured using time domain technique. The capacitance of the cell was calculated from the open circuit voltage decay (OCVD). The device exhibited high parallel resistance and low parallel capacitance. The carrier concentration and built in voltage were derived from the 1/C_P² versus bias voltage curve.