Title :
A broadband 24 GHz bandwidth 54 dB gain 180-mW amplifier employing common-collector combined with capacitive controlled cross-coupled feedback in 0.35 µm SiGe technology
Author :
Gharib, Ahmed ; Fischer, Georg ; Weigel, Robert ; Kissinger, Dietmar
Author_Institution :
Inst. for Electron. Eng., Univ. for Erlangen-Nuremberg, Erlangen, Germany
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
A 54 dB gain amplifier with a 3-dB bandwidth of 24 GHz is presented in this paper. The amplifier consists of three differential stages employing two different feedback techniques that are responsible for the bandwidth extension, without any noticeable reduction of gain, as well as a relatively flat gain response with negligible increase in area and power consumption. The amplifier consumes 180mW from a 3.3V supply and shows a gain-bandwidth product (GBP) of 12 THz.
Keywords :
Ge-Si alloys; feedback amplifiers; microwave amplifiers; power consumption; wideband amplifiers; SiGe; SiGe technology; bandwidth 12 THz; bandwidth 24 GHz; bandwidth extension; broadband amplifier; capacitive controlled feedback; common-collector; cross-coupled feedback; flat gain response; gain 3 dB; gain 54 dB; power 180 mW; power consumption; size 0.35 mum; voltage 3.3 V; Bandwidth; Broadband communication; CMOS integrated circuits; Gain; Impedance; Impedance matching; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798157
