High temperature stable RF MEMS switch based on tungsten-titanium

Author

Klein, S. ; Thilmont, S. ; Ziegler, V. ; Prechtel, U. ; Schmid, U. ; Seidel, H.

Author_Institution

Micromechanics, Microfluidics/Microactuators, Saarland Univ., Saarbrucken, Germany

fYear

2009

fDate

21-25 June 2009

Firstpage

1409

Lastpage

1412

Abstract

In this paper we present a high temperature stable, capacitive RF MEMS switch based on a tungsten-titanium alloy. The evaluation of the temperature stability was done by annealing experiments up to 500degC. Due to an intrinsic residual stress the switch features a large out of plane deflection. This allows the combination of high open-state isolation with a moderate pull-in voltage and with high restoring forces. Measurements of the high frequency performance in the 20 to 36 GHz range provided good results for insertion loss and isolation.

Keywords

internal stresses; microswitches; microwave switches; titanium alloys; tungsten alloys; capacitive RF MEMS switch; frequency 20 GHz to 36 GHz; intrinsic residual stress; temperature stability evaluation; tungsten-titanium alloy; Annealing; Frequency measurement; Loss measurement; Performance loss; Radiofrequency microelectromechanical systems; Residual stresses; Stability; Switches; Temperature; Voltage; RF MEMS; cantilever; electrostatic actuation; microswitch; stress; temperature stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285836

Filename

5285836